Global GaN Semiconductor Devices Market - Industry Size, Share, Growth, Trends and Forecast 2016 - 2024
"The
Latest Research Report GaN Semiconductor Devices Market - Global
Industry Analysis, Size, Share, Growth, Trends and Forecast 2016 -
2024 provides information on pricing, market analysis, shares,
forecast, and company profiles for key industry participants. -
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As
compared to gallium arsenide (GaAS) and silicon carbide (SiC),
Gallium nitride (GaN) is a new technology and is a wide band gap
semiconductor material. GaN semiconductor devices provide a
competitive advantage in terms of thermal performance, efficiency,
weight and size. GaN is anticipated to be the next generation power
semiconductor and thus different countries are indulged in developing
widespread applications of GaN semiconductors. The wide band gap
semiconductor technology has matured rapidly over several years. In
fact, Gallium Nitride High Electron Mobility Transistors (GaN HEMTs)
have been available as commercial off-the-shelf devices since 2005.
Recently, the IMEC (Interuniversity Microelectronics Center) in
Europe organized a “GaN-on-Si research program” in order to
produce an 8 inch GaN-on-Si wafer. However, fully-fledged application
of GaN semiconductor devices is still in the nascent stage as
compared to silicon semiconductor devices that have been around for
more than a decade.
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The
GaN semiconductors devices market is primarily being driven by
factors such as advancement in technology coupled with the expansion
in the application areas for GaN based devices. There has been a
rapid advancement in the GaN technology as a result of which various
companies are coming up with new innovative products that are
cost-effective and have better design and performance. Moreover, in
order to address the growing demand for high power and high
temperature applications there has been an increase in the usage of
GaN semiconductor devices. Compared to Silicon (Si) and Gallium
Arsenide (GaAs), gallium nitride is a robust technology and possesses
better performance characteristics. GaN semiconductor devices offer
high breakdown voltages, saturation velocity, high electron mobility
and high thermal conductivity among others. This has enabled the
implementation of GaN on a wide basis high frequency RF devices and
LEDs. These factors in combination are expected to positively impact
the growth of the GaN semiconductor devices globally.
However
one of the major restraints of the GaN semiconductor devices market
is the high production cost of pure Gallium nitride as compared to
silicon carbide, which has been a dominant semiconductor material for
high voltage power electronics for a decade. The various costs
involved in the production of GaN devices include cost of substrate,
fabrication, packaging, support electronics and development. Thus,
high cost is one of the major challenges in the commercialization of
GaN based devices. Though producing GaN in large volumes can help
overcome these issues, currently, there is no widespread adopted
method for growing GaN in bulk due to high operating pressures and
temperatures, low material quality and limited scalability.
The
competitive profiling of the key players in the global Gan
semiconductor devices market and their market shares across four
regions which include North America, Europe, Asia Pacific and Rest of
the World (RoW) have been exhaustively covered under the purview of
the study. Moreover, the distinct business strategies that have been
adopted by the major players in the market have also been included in
the report.
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A
comprehensive analysis of market dynamics, which include the market
drivers, restraints and opportunities, is included under the scope of
the report. Market dynamics are the distinctive factors that
influence the growth of the specific market and therefore help to
study the current trends in the global market. Additionally, list of
top GaN based IC manufacturers have also been included under the
scope of the research. Thus, this report provides an inclusive study
of the global GaN semiconductor devices market and also provides the
forecast of the market for the period from 2016-2024.
Some
of the major players in the market are: Mersen S.A., Avogy, Inc.,
Fujitsu Limited, GaN Systems Inc., Cree Inc., NXP Semiconductors
N.V., Renesas Electronics Corporation, Toshiba Corporation, Everlight
Electronics Co. and Efficient Power Conversion Corporation
The
global GaN semiconductor devices market has been segmented into:
Global
GaN semiconductor devices market, by Products
Power
Semiconductors
GaN
Radio Frequency Devices
Opto-semiconductors
Global
GaN semiconductor devices market, by Wafer Size: The market is
broadly segmented on the basis of wafer size into:
2
inch
4
inch
6
inch
8
inch
Global
GaN semiconductor devices market, by Application: The market is
broadly segmented on the basis of application into:
Information
and Communication Technology
Automotive
Consumer
Electronics
Defense
and Aerospace
Others
Global
GaN semiconductor devices market, by Geography: The market is broadly
segmented on the basis of geography into:
North
America
Europe
Asia
Pacific
Rest
of the World
Table
of content
Chapter
1 Preface
1.1
Report description
1.2
Research scope
1.3
Research methodology
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Chapter
2 Executive Summary
CHAPTER
3 Global GaN Semiconductor Devices Market Analysis, 2015 – 2024
(Revenue in USD)
3.1
Overview
3.2
Key Trend Analysis
3.3
Comparison between GaN and IGBT
3.4
List of top GaN based IC manufacturers
3.4.1
Plessey Semiconductors Limited
3.4.1.1
Business Description
3.4.1.2
Type of IC offerings
3.4.2
Texas Instruments Inc.
3.4.2.1
Business Description
3.4.2.2
Type of IC offerings
3.5
Comparison of GaN semiconductor devices revenue of TMR and other
research firms
3.6
Market Dynamics
3.6.1
Market Drivers
3.6.1.1
Advancement in technology
3.6.1.2
Expansion in the application areas for GaN based devices
3.6.1.3
Requirement of enhanced battlefield performance
3.6.1.4
Improving economic conditions
3.6.2
Restraints
3.6.2.1
High cost
3.6.3
Opportunities
3.6.3.1
Advent of Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)
3.7
Global GaN Semiconductor Devices Market Analysis, By Products, 2015 –
2024
3.7.1
Overview
3.7.1.1
Global GaN Semiconductor Devices Market Revenue Growth, By Products,
2015 –2024
3.7.1.2
Global GaN Semiconductor Devices Market Revenue Share (%), By
Products, 2015 –2024
3.7.2
Power Semiconductors
3.7.2.1
Overview
3.7.2.1.1
Global GaN based power semiconductor Market by Application, Revenue
and Forecast, 2015 – 2024 (USD Million)
3.7.2.2
Schottky Diode
3.7.2.2.1
Global GaN based Schottky Diode Market for Power Semiconductors
Revenue and Forecast, 2015 – 2024 (USD Million)
3.7.2.2.2
Global GaN based Schottky Diode Market for Power Semiconductors, by
Application, Revenue and Forecast, 2015 – 2024 (USD Million)
3.7.2.3
High Electron Mobility Transistors (HEMTs)
3.7.2.3.1
Global High Electron Mobility Transistors (HEMTs) Market for Power
Semiconductors Revenue and Forecast, 2015 – 2024 (USD Million)
3.7.2.3.1
Global High Electron Mobility Transistors (HEMTs) Market for Power
Semiconductor, by application Revenue and Forecast, 2015 – 2024
(USD Million)
3.7.2.4
Integrated Circuit (IC)
3.7.2.4.1
Global GaN Integrated Circuit (IC) Market for Power Semiconductors
Revenue and Forecast, 2015 – 2024 (USD Million)
3.7.2.4.2
Global GaN IC Market for Power Semiconductor, by application Revenue
and Forecast, 2015 – 2024 (USD Million)
3.7.2.5
Global GaN on Si for Power Semiconductors, Revenue and Forecast, 2015
– 2024 (USD Million)
3.7.3
GaN radio frequency (RF) devices
3.7.3.1
High Electron Mobility Transistors (HEMTs)
3.7.3.1.1
Global High Electron Mobility Transistors (HEMTs) Market for RF
Devices Revenue and Forecast, 2015 – 2024 (USD Million)
3.7.3.2
GaN based Integrated Circuit (IC)
3.7.3.2.1
Global GaN based Integrated Circuit (IC) Market for RF Devices
Revenue and Forecast, 2015 – 2024 (USD Million)
3.7.3.2.2
Global GaN based RF devices Market, by application Revenue and
Forecast, 2015 – 2024 (USD Million)
3.7.3.3
Global GaN on Si for GaN Radio Frequency Devices, Revenue and
Forecast, 2015 – 2024 (USD Million)
3.7.4
GaN based Opto semiconductors
3.7.4.1
Global GaN based Opto Semiconductors Market, Revenue and Forecast,
2015 – 2024 (USD Million)
3.7.4.2
Global GaN on Si Market for Opto Semiconductors, Revenue and
Forecast, 2015 – 2024 (USD Million)
3.7.4.3
GaN LED Lighting Market
3.7.4.3.1
Global GaN based opto semiconductors Market, by application Revenue
and Forecast, 2015 – 2024 (USD Million)
3.8
Global GaN Semiconductor Devices Market Analysis, By Wafer Size, 2015
– 2024
3.8.1
Overview
3.8.1.1
Global GaN Semiconductor Devices Market Revenue Growth, By Wafer
Size, 2015 –2024
3.8.1.2
Market Share, 2015 – 2024 (%)
3.8.2
2 inch wafer size
3.8.1
4 inch wafer size
3.8.2
6 inch wafer size
3.8.3
8 inch wafer size
3.8.4
Price Analysis, By Wafer Size, 2015 – 2024
3.8.4.1
Global GaN on SiRaw Wafer Revenue, By Size, Revenue and Forecast,
2015 – 2024 (USD Million)
3.9
Global GaN Semiconductor Devices Market Analysis, By Application,
2015 – 2024
3.9.1
Overview
3.9.1.1
Global GaN Semiconductor Devices Market Revenue Growth, By
Application, 2015 –2024
3.9.1.2
Market Share, 2015 – 2024 (%)
3.9.2
Information and Communication Technology
3.9.3
Automotive
3.9.4
Consumer Electronics
3.9.5
Defense and Aerospace
3.9.6
Others
3.10
Competitive landscape
3.10.1
Market positioning of key players, 2015
3.10.2
Competitive strategies adopted by leading players
3.10.1
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